A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells
نویسندگان
چکیده
In this work, we present an integrated read and programming circuit for Resistive Random Access Memory (RRAM) cells. Since there are a lot of different RRAM technologies in research the process variations new memory technology often spread over wide range electrical properties, proposed focuses on versatility order to be adaptable cell properties. The is suitable both operations based voltage pulses flexible length height. implemented method evaluating drop measurement resistor can distinguish up eight states, which coded binary, thereby realizing digitization analog value. was fabricated 130 nm CMOS line IHP. simulations were done using physics-based, multi-level model. results prove functionality system demonstrate that states with overall resistance ratio 7.9.
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ژورنال
عنوان ژورنال: Electronics
سال: 2021
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics10050530